STMicro said it will supply SiC power devices for Geely's multiple brands of mid- to high-end all-electric vehicles, helping to boost performance, speed up charging and extend range.
Geely Auto Group has signed a Silicon Carbide (SiC) power chip supply agreement with European chipmaker STMicroelectronics, as the Chinese automotive giant continues its electrification transition.
STMicro and Geely have signed a long-term supply agreement for SiC devices that will see the two accelerate their collaboration in this area, according to a press release from the chipmaker today.
STMicro will supply SiC power devices for Geely's mid-range and high-end all-electric vehicles across multiple brands to help improve vehicle performance, speed up charging and extend range, according to the release.
The two companies will also establish an innovation joint lab to exchange and explore solutions in areas including automotive electronic/electrical (E/E) architecture, in-vehicle infotainment, smart cockpit systems, ADAS (Advanced Driver Assistance System), and new energy vehicles (NEVs).
Geely Auto Group's electric drive inverters have adopted third-generation SiC MOSFET devices from STMicro, according to the press release.
The electric drive inverter is the heart of the electric drive system, and SiC MOSFETs can improve the energy efficiency, the release noted.
The SiC module is an upgrade of the IGBT (Insulated Gate Bipolar Transistor Chip) module, and is the third-generation power semiconductor that offers higher efficiency and resistance to high temperatures and voltages.
The module helps upgrade the voltage platform of NEVs from the conventional 400 V to a higher 800 V, resulting in higher energy efficiency performance.
In June 2023, STMicro entered into a joint venture agreement with Sanan Optoelectronics, a Chinese semiconductor company, to build an 8-inch SiC device joint venture manufacturing facility in Chongqing.
On December 22, 2023, STMicro said it signed a SiC supply agreement with Li Auto (NASDAQ: LI).
STMicro has more than 50 percent of the global SiC MOSFET market, the company said in a press release last December.
Nio's in-house developed SiC module sees major progress towards mass production
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